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BSB104N08NP3GXUSA1

MOSFET N-CH 80V 13A 2WDSON


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSB104N08NP3GXUSA1
  • Package: 3-WDSON
  • Datasheet: PDF
  • Stock: 638
  • Description: MOSFET N-CH 80V 13A 2WDSON (Kg)

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Details

Tags

Parameters
Pulsed Drain Current-Max (IDM) 200A
DS Breakdown Voltage-Min 80V
Avalanche Energy Rating (Eas) 110 mJ
RoHS Status ROHS3 Compliant
Factory Lead Time 26 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-WDSON
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series OptiMOS™
JESD-609 Code e4
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Silver/Nickel (Ag/Ni)
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.8W Ta 42W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10.4m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 3.5V @ 40μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2100pF @ 40V
Current - Continuous Drain (Id) @ 25°C 13A Ta 50A Tc
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Rise Time 4ns
Drain to Source Voltage (Vdss) 80V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 50A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0104Ohm
See Relate Datesheet