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  • BSB280N15NZ3GXUMA1

BSB280N15NZ3GXUMA1

Trans MOSFET N-CH 150V 9A 2-Pin WDSON


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSB280N15NZ3GXUMA1
  • Package: 3-WDSON
  • Datasheet: PDF
  • Stock: 831
  • Description: Trans MOSFET N-CH 150V 9A 2-Pin WDSON (Kg)

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Details

Tags

Parameters
Factory Lead Time 26 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-WDSON
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series OptiMOS™
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Silver/Nickel (Ag/Ni)
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.8W Ta 57W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 28m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 4V @ 60μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 75V
Current - Continuous Drain (Id) @ 25°C 9A Ta 30A Tc
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
Rise Time 6ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 3 ns
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 30A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 150V
Drain Current-Max (Abs) (ID) 9A
Drain-source On Resistance-Max 0.028Ohm
Pulsed Drain Current-Max (IDM) 120A
Avalanche Energy Rating (Eas) 120 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet