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  • BSC009NE2LSATMA1

BSC009NE2LSATMA1

Trans MOSFET N-CH 25V 41A 8-Pin TDSON EP T/R


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSC009NE2LSATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 740
  • Description: Trans MOSFET N-CH 25V 41A 8-Pin TDSON EP T/R (Kg)

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Details

Tags

Parameters
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Reach Compliance Code not_compliant
Pin Count 8
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta 96W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 0.9m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 5800pF @ 12V
Current - Continuous Drain (Id) @ 25°C 41A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 126nC @ 10V
Rise Time 33ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 19 ns
Turn-Off Delay Time 48 ns
Continuous Drain Current (ID) 41A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 25V
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Factory Lead Time 26 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
See Relate Datesheet