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  • BSC016N06NSATMA1

BSC016N06NSATMA1

MOSFET N-CH 60V 30A TDSON-8


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSC016N06NSATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 547
  • Description: MOSFET N-CH 60V 30A TDSON-8 (Kg)

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Details

Tags

Parameters
Pulsed Drain Current-Max (IDM) 400A
Max Junction Temperature (Tj) 150°C
Height 1.1mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Factory Lead Time 13 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2012
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDSO-F3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 2.5W Ta 139W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 19 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.6m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 2.8V @ 95μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 5200pF @ 30V
Current - Continuous Drain (Id) @ 25°C 30A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 71nC @ 10V
Rise Time 9ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 30A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 60V
Drain to Source Breakdown Voltage 60V
See Relate Datesheet