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  • BSC019N02KSGAUMA1

BSC019N02KSGAUMA1

MOSFET N-CH 20V 100A TDSON-8


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSC019N02KSGAUMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 111
  • Description: MOSFET N-CH 20V 100A TDSON-8 (Kg)

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Details

Tags

Parameters
Factory Lead Time 39 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDSO-F5
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.8W Ta 104W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 104W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.95m Ω @ 50A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 350μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 13000pF @ 10V
Current - Continuous Drain (Id) @ 25°C 30A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 85nC @ 4.5V
Rise Time 187ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 95 ns
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 12V
Max Dual Supply Voltage 20V
Drain Current-Max (Abs) (ID) 30A
Drain-source On Resistance-Max 0.003Ohm
Pulsed Drain Current-Max (IDM) 200A
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet