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BSC019N04LSATMA1

MOSFET N-CH 40V 27A 8TDSON


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSC019N04LSATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 384
  • Description: MOSFET N-CH 40V 27A 8TDSON (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 26 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Supplier Device Package PG-TDSON-8-1
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series OptiMOS™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.5W Ta 78W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2900pF @ 20V
Current - Continuous Drain (Id) @ 25°C 27A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V
Rise Time 4ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 40V
Input Capacitance 2.9nF
Drain to Source Resistance 1.5mOhm
Rds On Max 1.9 mΩ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet