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  • BSC026N04LSATMA1

BSC026N04LSATMA1

MOSFET N-CH 40V 23A 8TDSON


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSC026N04LSATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 727
  • Description: MOSFET N-CH 40V 23A 8TDSON (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 26 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Supplier Device Package PG-TDSON-8-6
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series OptiMOS™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.5W Ta 63W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2300pF @ 20V
Current - Continuous Drain (Id) @ 25°C 23A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Rise Time 4ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 20V
Input Capacitance 2.3nF
Drain to Source Resistance 2.1mOhm
Rds On Max 2.6 mΩ
RoHS Status ROHS3 Compliant
See Relate Datesheet