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  • BSC037N08NS5ATMA1

BSC037N08NS5ATMA1

MOSFET N-CH 80V 100A 8TDSON


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSC037N08NS5ATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 681
  • Description: MOSFET N-CH 80V 100A 8TDSON (Kg)

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Details

Tags

Parameters
Factory Lead Time 26 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series OptiMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.5W Ta 114W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.7m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 3.8V @ 72μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 4200pF @ 40V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 58nC @ 10V
Rise Time 10ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 100A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 80V
Drain Current-Max (Abs) (ID) 22A
Drain-source On Resistance-Max 0.0037Ohm
Drain to Source Breakdown Voltage 80V
Pulsed Drain Current-Max (IDM) 400A
Max Junction Temperature (Tj) 150°C
Height 1.1mm
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet