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  • BSC046N02KSGAUMA1

BSC046N02KSGAUMA1

MOSFET N-CH 20V 80A TDSON-8


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSC046N02KSGAUMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 126
  • Description: MOSFET N-CH 20V 80A TDSON-8 (Kg)

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Details

Tags

Parameters
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.6m Ω @ 50A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 110μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 4100pF @ 10V
Current - Continuous Drain (Id) @ 25°C 19A Ta 80A Tc
Gate Charge (Qg) (Max) @ Vgs 27.6nC @ 4.5V
Rise Time 117ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 34 ns
Continuous Drain Current (ID) 80A
Threshold Voltage 950mV
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 19A
Drain-source On Resistance-Max 0.0046Ohm
Drain to Source Breakdown Voltage 20V
Pulsed Drain Current-Max (IDM) 200A
Avalanche Energy Rating (Eas) 151 mJ
Nominal Vgs 950 mV
Height 1.1mm
Factory Lead Time 26 Weeks
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Surface Mount YES
Length 6.35mm
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series OptiMOS™
Width 5.35mm
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 5
REACH SVHC No SVHC
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
RoHS Status ROHS3 Compliant
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDSO-F5
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 2.8W Ta 48W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 48W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type N-Channel
See Relate Datesheet