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BSC057N03LSGATMA1

Trans MOSFET N-CH 30V 17A 8-Pin TDSON EP


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSC057N03LSGATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 635
  • Description: Trans MOSFET N-CH 30V 17A 8-Pin TDSON EP (Kg)

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Details

Tags

Parameters
Factory Lead Time 26 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta 45W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 45W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.7m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 15V
Current - Continuous Drain (Id) @ 25°C 17A Ta 71A Tc
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Rise Time 3.6ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 17A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 30V
Avalanche Energy Rating (Eas) 25 mJ
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet