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  • BSC070N10NS5ATMA1

BSC070N10NS5ATMA1

MOSFET N-CH 100V 80A TDSON-8


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSC070N10NS5ATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 252
  • Description: MOSFET N-CH 100V 80A TDSON-8 (Kg)

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Details

Tags

Parameters
Input Capacitance (Ciss) (Max) @ Vds 2700pF @ 50V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Rise Time 5ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 6 ns
Factory Lead Time 26 Weeks
Turn-Off Delay Time 24 ns
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Continuous Drain Current (ID) 14A
Number of Pins 8
Gate to Source Voltage (Vgs) 20V
Weight 506.605978mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Max Dual Supply Voltage 100V
Packaging Tape & Reel (TR)
Drain-source On Resistance-Max 0.007Ohm
Published 2011
Drain to Source Breakdown Voltage 100V
Series OptiMOS™
Pulsed Drain Current-Max (IDM) 320A
Pbfree Code yes
Part Status Active
Avalanche Energy Rating (Eas) 55 mJ
Max Junction Temperature (Tj) 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Height 1.1mm
Technology MOSFET (Metal Oxide)
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.5W Ta 83W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7m Ω @ 40A, 10V
Vgs(th) (Max) @ Id 3.8V @ 50μA
Halogen Free Halogen Free
See Relate Datesheet