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  • BSC079N03SG

BSC079N03SG

MOSFET N-CH 30V 40A TDSON-8


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSC079N03SG
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 193
  • Description: MOSFET N-CH 30V 40A TDSON-8 (Kg)

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Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series OptiMOS™
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish MATTE TIN
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating 40A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDSO-F5
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.8W Ta 60W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.8W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.9m Ω @ 40A, 10V
Vgs(th) (Max) @ Id 2V @ 30μA
Input Capacitance (Ciss) (Max) @ Vds 2230pF @ 15V
Current - Continuous Drain (Id) @ 25°C 14.6A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs 17nC @ 5V
Rise Time 4.2ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 3.4 ns
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) 40A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 14.6A
Drain-source On Resistance-Max 0.0116Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 160A
Avalanche Energy Rating (Eas) 120 mJ
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet