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  • BSC080N03MSGATMA1

BSC080N03MSGATMA1

Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSC080N03MSGATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 339
  • Description: Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP (Kg)

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Details

Tags

Parameters
Factory Lead Time 26 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2002
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Pin Count 8
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta 35W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 35W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2100pF @ 15V
Current - Continuous Drain (Id) @ 25°C 13A Ta 53A Tc
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Rise Time 5.4ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5.6 ns
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) 13A
Gate to Source Voltage (Vgs) 20V
DS Breakdown Voltage-Min 30V
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet