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BSC080P03LSGAUMA1

Trans MOSFET P-CH 30V 16A 8-Pin TDSON


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSC080P03LSGAUMA1
  • Package: 8-PowerVDFN
  • Datasheet: PDF
  • Stock: 889
  • Description: Trans MOSFET P-CH 30V 16A 8-Pin TDSON (Kg)

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Details

Tags

Parameters
Factory Lead Time 16 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 5
ECCN Code EAR99
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDSO-F5
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta 89W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 6140pF @ 15V
Current - Continuous Drain (Id) @ 25°C 16A Ta 30A Tc
Gate Charge (Qg) (Max) @ Vgs 122.4nC @ 10V
Rise Time 87ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Continuous Drain Current (ID) 16A
Gate to Source Voltage (Vgs) 25V
Max Dual Supply Voltage -30V
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet