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BSC084P03NS3EGATMA1

MOSFET P-CH 30V 14.9A TDSON-8


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSC084P03NS3EGATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 578
  • Description: MOSFET P-CH 30V 14.9A TDSON-8 (Kg)

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Details

Tags

Parameters
Vgs (Max) ±25V
Fall Time (Typ) 8.1 ns
Turn-Off Delay Time 33.3 ns
Continuous Drain Current (ID) 14.9A
Gate to Source Voltage (Vgs) 25V
Max Dual Supply Voltage -30V
Pulsed Drain Current-Max (IDM) 200A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Pin Count 8
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta 69W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 16.4 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.4m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 3V @ 110μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 4240pF @ 15V
Current - Continuous Drain (Id) @ 25°C 14.9A Ta 78.6A Tc
Gate Charge (Qg) (Max) @ Vgs 57.7nC @ 10V
Rise Time 133.5ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
See Relate Datesheet