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  • BSC0909NSATMA1

BSC0909NSATMA1

MOSFET N-CH 34V 44A 8TDSON


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSC0909NSATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 139
  • Description: MOSFET N-CH 34V 44A 8TDSON (Kg)

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Details

Tags

Parameters
Rise Time 4.4ns
Drain to Source Voltage (Vdss) 34V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5.4 ns
Turn-Off Delay Time 8.9 ns
Factory Lead Time 39 Weeks
Continuous Drain Current (ID) 44A
Mount Surface Mount
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 30V
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Drain Current-Max (Abs) (ID) 12A
Drain-source On Resistance-Max 0.0091Ohm
Transistor Element Material SILICON
Pulsed Drain Current-Max (IDM) 176A
Avalanche Energy Rating (Eas) 10 mJ
Operating Temperature -55°C~150°C TJ
RoHS Status ROHS3 Compliant
Packaging Tape & Reel (TR)
Lead Free Contains Lead
Published 2013
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDSO-F5
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta 27W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 9.6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.2m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1110pF @ 15V
Current - Continuous Drain (Id) @ 25°C 12A Ta 44A Tc
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
See Relate Datesheet