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BSC093N15NS5ATMA1

MOSFET N-CH 150V 87A TDSON-8


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSC093N15NS5ATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 292
  • Description: MOSFET N-CH 150V 87A TDSON-8 (Kg)

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Details

Tags

Parameters
Factory Lead Time 26 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series OptiMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 139W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 139W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.3m Ω @ 44A, 10V
Vgs(th) (Max) @ Id 4.6V @ 107μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 3230pF @ 75V
Current - Continuous Drain (Id) @ 25°C 87A Tc
Gate Charge (Qg) (Max) @ Vgs 40.7nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 8V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 14.4 ns
Continuous Drain Current (ID) 87A
Threshold Voltage 3.8V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 150V
Drain-source On Resistance-Max 0.0093Ohm
Drain to Source Breakdown Voltage 150V
Max Junction Temperature (Tj) 150°C
Height 1.1mm
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet