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BSC118N10NSGATMA1

Trans MOSFET N-CH 100V 11A 8-Pin TDSON EP


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSC118N10NSGATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 362
  • Description: Trans MOSFET N-CH 100V 11A 8-Pin TDSON EP (Kg)

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Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Factory Lead Time 26 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series OptiMOS™
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDSO-F5
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 114W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 114W
Case Connection DRAIN
Turn On Delay Time 21 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 11.8m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 70μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 3700pF @ 50V
Current - Continuous Drain (Id) @ 25°C 11A Ta 71A Tc
Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 32 ns
Continuous Drain Current (ID) 11A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 100V
See Relate Datesheet