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  • BSC265N10LSFGATMA1

BSC265N10LSFGATMA1

Trans MOSFET N-CH 100V 6.5A 8-Pin TDSON EP T/R


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSC265N10LSFGATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 109
  • Description: Trans MOSFET N-CH 100V 6.5A 8-Pin TDSON EP T/R (Kg)

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Details

Tags

Parameters
Factory Lead Time 13 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDSO-F5
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 78W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 78W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 26.5m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.4V @ 43μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 50V
Current - Continuous Drain (Id) @ 25°C 6.5A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
Rise Time 24ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 40A
Threshold Voltage 1.85V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 100V
Drain Current-Max (Abs) (ID) 6.5A
Drain-source On Resistance-Max 0.0265Ohm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet