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BSC320N20NS3GATMA1

BSC320N20NS3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSC320N20NS3GATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 803
  • Description: BSC320N20NS3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Packaging Tape & Reel (TR)
Continuous Drain Current (ID) 36A
Published 2004
Gate to Source Voltage (Vgs) 20V
Series OptiMOS™
Max Dual Supply Voltage 200V
Drain-source On Resistance-Max 0.032Ohm
JESD-609 Code e3
Pbfree Code no
RoHS Status ROHS3 Compliant
Part Status Active
Lead Free Contains Lead
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDSO-F5
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 125W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 125W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 32m Ω @ 36A, 10V
Vgs(th) (Max) @ Id 4V @ 90μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2350pF @ 100V
Current - Continuous Drain (Id) @ 25°C 36A Tc
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Factory Lead Time 26 Weeks
Contact Plating Tin
Mount Surface Mount
Rise Time 9ns
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Drive Voltage (Max Rds On,Min Rds On) 10V
Transistor Element Material SILICON
Vgs (Max) ±20V
Operating Temperature -55°C~150°C TJ
See Relate Datesheet