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  • BSC340N08NS3GATMA1

BSC340N08NS3GATMA1

Trans MOSFET N-CH 80V 7A 8-Pin TDSON EP T/R


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSC340N08NS3GATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 588
  • Description: Trans MOSFET N-CH 80V 7A 8-Pin TDSON EP T/R (Kg)

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Details

Tags

Parameters
Factory Lead Time 26 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Pin Count 8
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta 32W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 34m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 3.5V @ 12μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 756pF @ 40V
Current - Continuous Drain (Id) @ 25°C 7A Ta 23A Tc
Gate Charge (Qg) (Max) @ Vgs 9.1nC @ 10V
Rise Time 3ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 2 ns
Turn-Off Delay Time 11 ns
Continuous Drain Current (ID) 7A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 80V
Drain Current-Max (Abs) (ID) 23A
Drain-source On Resistance-Max 0.034Ohm
Pulsed Drain Current-Max (IDM) 92A
Avalanche Energy Rating (Eas) 20 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet