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  • BSC440N10NS3GATMA1

BSC440N10NS3GATMA1

Trans MOSFET N-CH 100V 5.3A 8-Pin TDSON EP


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSC440N10NS3GATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 448
  • Description: Trans MOSFET N-CH 100V 5.3A 8-Pin TDSON EP (Kg)

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The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 26 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Supplier Device Package PG-TDSON-8-1
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series OptiMOS™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 29W Tc
Power Dissipation 29W
Turn On Delay Time 9 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 44mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 3.5V @ 12μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 810pF @ 50V
Current - Continuous Drain (Id) @ 25°C 5.3A Ta 18A Tc
Gate Charge (Qg) (Max) @ Vgs 10.8nC @ 10V
Rise Time 3ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 18A
Threshold Voltage 2.7mV
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 100V
Drain to Source Breakdown Voltage 100V
Input Capacitance 810pF
Max Junction Temperature (Tj) 150°C
Drain to Source Resistance 44mOhm
Rds On Max 44 mΩ
Height 1.1mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet