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  • BSC886N03LSGATMA1

BSC886N03LSGATMA1

MOSFET N-CH 30V 65A TDSON-8


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSC886N03LSGATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 205
  • Description: MOSFET N-CH 30V 65A TDSON-8 (Kg)

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Details

Tags

Parameters
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 4.2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2100pF @ 15V
Current - Continuous Drain (Id) @ 25°C 13A Ta 65A Tc
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Rise Time 3.2ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 3 ns
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 65A
Threshold Voltage 2.2V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0092Ohm
Pulsed Drain Current-Max (IDM) 260A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 20 mJ
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Factory Lead Time 26 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series OptiMOS™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-N5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta 39W Tc
See Relate Datesheet