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BSF083N03LQ G
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| Parameters | |
|---|---|
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Drain Current-Max (Abs) (ID) | 13A |
| Drain-source On Resistance-Max | 0.0142Ohm |
| Pulsed Drain Current-Max (IDM) | 212A |
| DS Breakdown Voltage-Min | 30V |
| Avalanche Energy Rating (Eas) | 30 mJ |
| RoHS Status | RoHS Compliant |
| Mounting Type | Surface Mount |
| Package / Case | 3-WDSON |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| Series | OptiMOS™ |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | MATTE TIN |
| Additional Feature | AVALANCHE RATED |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | 260 |
| Reach Compliance Code | compliant |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 3 |
| JESD-30 Code | R-MBCC-N3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 2.2W Ta 36W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 8.3m Ω @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1800pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 13A Ta 53A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
See Relate Datesheet