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  • BSH103,235

BSH103,235

MOSFET N-CH 30V 0.85A SOT23


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-BSH103,235
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 720
  • Description: MOSFET N-CH 30V 0.85A SOT23 (Kg)

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Details

Tags

Parameters
Factory Lead Time 4 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1998
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
HTS Code 8541.21.00.75
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
Number of Elements 1
Power Dissipation-Max 540mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 500mW
Turn On Delay Time 2.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 400m Ω @ 500mA, 4.5V
Vgs(th) (Max) @ Id 400mV @ 1mA (Min)
Input Capacitance (Ciss) (Max) @ Vds 83pF @ 24V
Current - Continuous Drain (Id) @ 25°C 850mA Ta
Gate Charge (Qg) (Max) @ Vgs 2.1nC @ 4.5V
Rise Time 3.5ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V
Vgs (Max) ±8V
Fall Time (Typ) 3.5 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 850mA
Gate to Source Voltage (Vgs) 8V
Max Dual Supply Voltage 30V
Drain Current-Max (Abs) (ID) 0.85A
Drain-source On Resistance-Max 0.5Ohm
Drain to Source Breakdown Voltage 30V
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet