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  • BSH111BKR

BSH111BKR

MOSFET 55V N-channel Trench MOSFET


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-BSH111BKR
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 876
  • Description: MOSFET 55V N-channel Trench MOSFET (Kg)

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Details

Tags

Parameters
Terminal Form GULL WING
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 302mW Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 302mW
Turn On Delay Time 8.3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4 Ω @ 200mA, 4.5V
Vgs(th) (Max) @ Id 1.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 30pF @ 30V
Current - Continuous Drain (Id) @ 25°C 210mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.5nC @ 4.5V
Factory Lead Time 4 Weeks
Rise Time 8.4ns
Contact Plating Tin
Drive Voltage (Max Rds On,Min Rds On) 4.5V
Mount Surface Mount
Vgs (Max) ±10V
Mounting Type Surface Mount
Fall Time (Typ) 4.8 ns
Package / Case TO-236-3, SC-59, SOT-23-3
Turn-Off Delay Time 12.6 ns
Number of Pins 3
Continuous Drain Current (ID) 210mA
Threshold Voltage 1V
Transistor Element Material SILICON
Gate to Source Voltage (Vgs) 10V
Operating Temperature -55°C~150°C TJ
Drain-source On Resistance-Max 4Ohm
Drain to Source Breakdown Voltage 55V
Packaging Cut Tape (CT)
Max Junction Temperature (Tj) 150°C
Published 2014
Ambient Temperature Range High 150°C
Part Status Active
Feedback Cap-Max (Crss) 7 pF
Height 1.1mm
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Lead Free
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
See Relate Datesheet