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  • BSH202,215

BSH202,215

NEXPERIA - BSH202,215 - P CHANNEL, DMOS FET, -30V, -520MA, 3-SOT-23


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-BSH202,215
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 532
  • Description: NEXPERIA - BSH202,215 - P CHANNEL, DMOS FET, -30V, -520MA, 3-SOT-23 (Kg)

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FedEx International, 5-7 business days.

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Details

Tags

Parameters
Factory Lead Time 4 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1998
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Resistance 900mOhm
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
Number of Elements 1
Power Dissipation-Max 417mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 417mW
Turn On Delay Time 2 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 900m Ω @ 280mA, 10V
Vgs(th) (Max) @ Id 1.9V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 80pF @ 24V
Current - Continuous Drain (Id) @ 25°C 520mA Ta
Gate Charge (Qg) (Max) @ Vgs 2.9nC @ 10V
Rise Time 4.5ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.5 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) -520mA
Threshold Voltage -1.9V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage -30V
Drain Current-Max (Abs) (ID) 0.52A
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage -30V
Nominal Vgs -1.9 V
Height 6.35mm
Length 6.35mm
Width 6.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet