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  • BSH207,135

BSH207,135

NEXPERIA - BSH207,135 - MOSFET P-CH 12V 1.52A SOT457


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-BSH207,135
  • Package: SC-74, SOT-457
  • Datasheet: -
  • Stock: 961
  • Description: NEXPERIA - BSH207,135 - MOSFET P-CH 12V 1.52A SOT457 (Kg)

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Details

Tags

Parameters
Contact Plating Tin
Mounting Type Surface Mount
Package / Case SC-74, SOT-457
Number of Pins 6
Supplier Device Package 6-TSOP
Weight 4.535924g
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1998
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 417mW Ta
Element Configuration Single
Power Dissipation 417mW
Turn On Delay Time 2 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 120mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 600mV @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 500pF @ 9.6V
Current - Continuous Drain (Id) @ 25°C 1.52A Ta
Gate Charge (Qg) (Max) @ Vgs 8.8nC @ 4.5V
Rise Time 4.5ns
Drain to Source Voltage (Vdss) 12V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 4.5 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) -1.52A
Threshold Voltage -600mV
Gate to Source Voltage (Vgs) 8V
Max Dual Supply Voltage -12V
Drain to Source Breakdown Voltage 12V
Dual Supply Voltage -12V
Input Capacitance 500pF
Drain to Source Resistance 120mOhm
Rds On Max 120 mΩ
Nominal Vgs -600 mV
Height 1mm
Length 3.1mm
Width 1.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet