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  • BSL307SPH6327XTSA1

BSL307SPH6327XTSA1

MOSFET P-CH 30V 5.5A 6TSOP


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSL307SPH6327XTSA1
  • Package: SOT-23-6 Thin, TSOT-23-6
  • Datasheet: PDF
  • Stock: 787
  • Description: MOSFET P-CH 30V 5.5A 6TSOP (Kg)

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Details

Tags

Parameters
Factory Lead Time 10 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2001
Series OptiMOS™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Voltage - Rated DC -30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Current Rating -5.5A
Reference Standard AEC-Q101
Number of Elements 1
Power Dissipation-Max 2W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 7.3 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 43m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id 2V @ 40μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 805pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.5A Ta
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Rise Time 8.4ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 29 ns
Turn-Off Delay Time 36.4 ns
Continuous Drain Current (ID) 5.5A
Threshold Voltage -1.5V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage -30V
Drain-source On Resistance-Max 0.043Ohm
Pulsed Drain Current-Max (IDM) 22A
Avalanche Energy Rating (Eas) 44 mJ
Height 1mm
Length 2.9mm
Width 1.6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet