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BSM35GD120DN2

BSM35GD120DN2 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSM35GD120DN2
  • Package: Module
  • Datasheet: PDF
  • Stock: 914
  • Description: BSM35GD120DN2 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 18 Weeks
Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 17
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Published 1999
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 17
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 280W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 17
Number of Elements 6
Configuration Three Phase Inverter
Power Dissipation 280W
Case Connection ISOLATED
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 50A
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.7V
Turn On Time 120 ns
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 35A
Turn Off Time-Nom (toff) 450 ns
IGBT Type NPT
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 2nF @ 25V
VCEsat-Max 3.2 V
Height 17mm
Length 107.5mm
Width 45.5mm
RoHS Status RoHS Compliant
See Relate Datesheet