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BSM50GD120DN2G

BSM50GD120DN2G datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSM50GD120DN2G
  • Package: Module
  • Datasheet: PDF
  • Stock: 872
  • Description: BSM50GD120DN2G datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 21
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Published 2012
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 39
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Terminal Position UPPER
Terminal Form THROUGH-HOLE
Pin Count 39
JESD-30 Code R-XUFM-T39
Number of Elements 6
Configuration Full Bridge
Power Dissipation 400W
Case Connection ISOLATED
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 72A
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 78A
Collector Emitter Saturation Voltage 2.5V
Turn On Time 100 ns
Vce(on) (Max) @ Vge, Ic 3.7V @ 15V, 50A
Turn Off Time-Nom (toff) 450 ns
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 33nF @ 25V
VCEsat-Max 3.7 V
RoHS Status RoHS Compliant
See Relate Datesheet