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  • BSO110N03MSGXUMA1

BSO110N03MSGXUMA1

Trans MOSFET N-CH 30V 10A 8-Pin DSO T/R


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSO110N03MSGXUMA1
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 480
  • Description: Trans MOSFET N-CH 30V 10A 8-Pin DSO T/R (Kg)

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Details

Tags

Parameters
Factory Lead Time 18 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series OptiMOS™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 8
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.56W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.56W
Turn On Delay Time 7.8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 11m Ω @ 12.1A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 15V
Current - Continuous Drain (Id) @ 25°C 10A Ta
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 4.4ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.4 ns
Turn-Off Delay Time 9.5 ns
Continuous Drain Current (ID) 10A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 30V
Avalanche Energy Rating (Eas) 20 mJ
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet