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BSO200P03SHXUMA1

Trans MOSFET P-CH 30V 7.4A 8-Pin DSO Dry


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSO200P03SHXUMA1
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 150
  • Description: Trans MOSFET P-CH 30V 7.4A 8-Pin DSO Dry (Kg)

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Details

Tags

Parameters
Factory Lead Time 18 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDSO-G8
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.56W Ta
Operating Mode ENHANCEMENT MODE
FET Type P-Channel
Rds On (Max) @ Id, Vgs 20m Ω @ 9.1A, 10V
Vgs(th) (Max) @ Id 1.5V @ 100μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2330pF @ 25V
Current - Continuous Drain (Id) @ 25°C 7.4A Ta
Gate Charge (Qg) (Max) @ Vgs 54nC @ 10V
Rise Time 11ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Continuous Drain Current (ID) 7.4A
Gate to Source Voltage (Vgs) 25V
Max Dual Supply Voltage -30V
Drain-source On Resistance-Max 0.02Ohm
Pulsed Drain Current-Max (IDM) 36.4A
Avalanche Energy Rating (Eas) 98 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet