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BSO604NS2XUMA1

MOSFET 2N-CH 55V 5A 8DSO


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSO604NS2XUMA1
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 294
  • Description: MOSFET 2N-CH 55V 5A 8DSO (Kg)

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Shipping Cost

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Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 8 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series OptiMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 8
ECCN Code EAR99
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Voltage - Rated DC 55V
Max Power Dissipation 2W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 5A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BSO604NS2
Pin Count 8
Qualification Status Not Qualified
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power - Max 2W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 35m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id 2V @ 30μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 870pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Rise Time 8ns
Continuous Drain Current (ID) 5A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 55V
Drain Current-Max (Abs) (ID) 5A
Drain-source On Resistance-Max 0.044Ohm
Pulsed Drain Current-Max (IDM) 20A
Avalanche Energy Rating (Eas) 90 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet