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  • BSO613SPVGHUMA1

BSO613SPVGHUMA1

MOSFET P-CH 60V 3.44A 8DSO


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSO613SPVGHUMA1
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 921
  • Description: MOSFET P-CH 60V 3.44A 8DSO (Kg)

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Details

Tags

Parameters
Threshold Voltage -3V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage -60V
Drain to Source Breakdown Voltage -60V
Height 1.75mm
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Factory Lead Time 26 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Manufacturer Package Identifier PG-SO 8
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1999
Series SIPMOS®
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 8
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Voltage - Rated DC -60V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating -3.44A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 2.5W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 10 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 130m Ω @ 3.44A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Halogen Free Not Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 875pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.44A Ta
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Rise Time 11ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 32 ns
Continuous Drain Current (ID) -3.44A
See Relate Datesheet