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BSP030,115

NEXPERIA - BSP030,115 - MOSFET, N CH, 30V, 10A, SOT223


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-BSP030,115
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 289
  • Description: NEXPERIA - BSP030,115 - MOSFET, N CH, 30V, 10A, SOT223 (Kg)

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Details

Tags

Parameters
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Series TrenchMOS™
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 30MOhm
Additional Feature LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
Number of Elements 1
Power Dissipation-Max 8.3W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 8.3W
Case Connection DRAIN
Turn On Delay Time 8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 30m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 770pF @ 24V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Rise Time 10ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 10A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 30V
Drain to Source Breakdown Voltage 30V
Nominal Vgs 2 V
Height 1.7mm
Length 6.7mm
Width 3.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Number of Pins 4
See Relate Datesheet