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  • BSP135H6327XTSA1

BSP135H6327XTSA1

BSP135H6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSP135H6327XTSA1
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 209
  • Description: BSP135H6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2012
Series SIPMOS®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 4
Number of Elements 1
Voltage 600V
Power Dissipation-Max 1.8W Ta
Element Configuration Single
Current 12A
Power Dissipation 1.8W
Case Connection DRAIN
Turn On Delay Time 5.4 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 45 Ω @ 120mA, 10V
Vgs(th) (Max) @ Id 1V @ 94μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 146pF @ 25V
Current - Continuous Drain (Id) @ 25°C 120mA Ta
Gate Charge (Qg) (Max) @ Vgs 4.9nC @ 5V
Rise Time 5.6ns
Drive Voltage (Max Rds On,Min Rds On) 0V 10V
Vgs (Max) ±20V
Fall Time (Typ) 182 ns
Turn-Off Delay Time 28 ns
Continuous Drain Current (ID) 120mA
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 600V
Drain to Source Breakdown Voltage 600V
Recovery Time 130 ns
FET Feature Depletion Mode
Height 1.5mm
Length 6.5mm
Width 3.5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 10 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
See Relate Datesheet