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BSP171PH6327XTSA1

BSP171PH6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSP171PH6327XTSA1
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 510
  • Description: BSP171PH6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Voltage 60V
REACH SVHC No SVHC
Power Dissipation-Max 1.8W Ta
Element Configuration Single
RoHS Status ROHS3 Compliant
Current 19A
Lead Free Lead Free
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.8W
Case Connection DRAIN
Turn On Delay Time 6 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 300m Ω @ 1.9A, 10V
Vgs(th) (Max) @ Id 2V @ 460μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 460pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.9A Ta
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 25ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Factory Lead Time 10 Weeks
Contact Plating Tin
Mount Surface Mount
Fall Time (Typ) 87 ns
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Turn-Off Delay Time 208 ns
Number of Pins 4
Continuous Drain Current (ID) 1.45A
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Threshold Voltage 1.5V
Published 2005
Gate to Source Voltage (Vgs) 20V
Series SIPMOS®
Max Dual Supply Voltage -60V
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Drain-source On Resistance-Max 0.3Ohm
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Drain to Source Breakdown Voltage 60V
Number of Terminations 4
Termination SMD/SMT
Dual Supply Voltage -60V
Nominal Vgs 1.5 V
ECCN Code EAR99
Feedback Cap-Max (Crss) 55 pF
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Height 1.6mm
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Length 6.5mm
Terminal Position DUAL
Width 6.7mm
Terminal Form GULL WING
Pin Count 4
Radiation Hardening No
Number of Elements 1
See Relate Datesheet