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BSP230,135

NEXPERIA - BSP230,135 - P CHANNEL, DMOS FET, -300V, -210MA, 3-SOT-223


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-BSP230,135
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 441
  • Description: NEXPERIA - BSP230,135 - P CHANNEL, DMOS FET, -300V, -210MA, 3-SOT-223 (Kg)

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Details

Tags

Parameters
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
HTS Code 8541.29.00.75
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 4
JESD-30 Code R-PDSO-G4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.5W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.5W
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 17 Ω @ 170mA, 10V
Vgs(th) (Max) @ Id 2.55V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 90pF @ 25V
Current - Continuous Drain (Id) @ 25°C 210mA Ta
Drain to Source Voltage (Vdss) 300V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 0.21A
Feedback Cap-Max (Crss) 15 pF
RoHS Status ROHS3 Compliant
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 1998
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
See Relate Datesheet