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  • BSP296L6327HTSA1

BSP296L6327HTSA1

Trans MOSFET N-CH 100V 1.1A Automotive 4-Pin(3+Tab) SOT-223 T/R


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSP296L6327HTSA1
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 653
  • Description: Trans MOSFET N-CH 100V 1.1A Automotive 4-Pin(3+Tab) SOT-223 T/R (Kg)

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Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2002
Series SIPMOS®
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish MATTE TIN
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.79W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.79W
Case Connection DRAIN
Turn On Delay Time 5.2 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 700m Ω @ 1.1A, 10V
Vgs(th) (Max) @ Id 1.8V @ 400μA
Input Capacitance (Ciss) (Max) @ Vds 364pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.1A Ta
Gate Charge (Qg) (Max) @ Vgs 17.2nC @ 10V
Rise Time 7.9ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 21.4 ns
Turn-Off Delay Time 37.4 ns
Continuous Drain Current (ID) 1.1A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.7Ohm
Radiation Hardening No
RoHS Status RoHS Compliant
See Relate Datesheet