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  • BSP298H6327XUSA1

BSP298H6327XUSA1

Trans MOSFET N-CH 400V 0.5A Automotive 4-Pin(3+Tab) SOT-223 T/R


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSP298H6327XUSA1
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 929
  • Description: Trans MOSFET N-CH 400V 0.5A Automotive 4-Pin(3+Tab) SOT-223 T/R (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 10 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 3
Supplier Device Package PG-SOT223-4
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2008
Series SIPMOS®
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Termination SMD/SMT
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 1.8W Ta
Element Configuration Single
Power Dissipation 1.8W
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 500mA Ta
Rise Time 25ns
Drain to Source Voltage (Vdss) 400V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 500mA
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 400V
Drain to Source Breakdown Voltage 400V
Dual Supply Voltage 400V
Input Capacitance 400pF
Drain to Source Resistance 2.2Ohm
Rds On Max 3 Ω
Nominal Vgs 3 V
Height 1.6mm
Length 6.5mm
Width 6.7mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet