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  • BSP321PH6327XTSA1

BSP321PH6327XTSA1

Trans MOSFET P-CH 100V 0.98A 4-Pin SOT-223 T/R


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSP321PH6327XTSA1
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 239
  • Description: Trans MOSFET P-CH 100V 0.98A 4-Pin SOT-223 T/R (Kg)

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Details

Tags

Parameters
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Factory Lead Time 10 Weeks
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Contact Plating Tin
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
Mount Surface Mount
Number of Elements 1
Mounting Type Surface Mount
Number of Channels 1
Package / Case TO-261-4, TO-261AA
Power Dissipation-Max 1.8W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Number of Pins 4
Case Connection DRAIN
Weight 250.212891mg
Turn On Delay Time 5.9 ns
FET Type P-Channel
Transistor Element Material SILICON
Rds On (Max) @ Id, Vgs 900m Ω @ 980mA, 10V
Vgs(th) (Max) @ Id 4V @ 380μA
Halogen Free Halogen Free
Operating Temperature -55°C~150°C TJ
Input Capacitance (Ciss) (Max) @ Vds 319pF @ 25V
Current - Continuous Drain (Id) @ 25°C 980mA Tc
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Packaging Tape & Reel (TR)
Rise Time 4.4ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Published 2012
Vgs (Max) ±20V
Fall Time (Typ) 8.5 ns
Turn-Off Delay Time 16.5 ns
Series SIPMOS™
Continuous Drain Current (ID) 980mA
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage -100V
Drain Current-Max (Abs) (ID) 0.98A
JESD-609 Code e3
Drain-source On Resistance-Max 0.9Ohm
Height 3.5mm
Length 6.5mm
Width 1.6mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pbfree Code yes
See Relate Datesheet