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  • BSP324H6327XTSA1

BSP324H6327XTSA1

Trans MOSFET N-CH 400V 0.17A 4-Pin(3+Tab) SOT-223 T/R


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSP324H6327XTSA1
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 410
  • Description: Trans MOSFET N-CH 400V 0.17A 4-Pin(3+Tab) SOT-223 T/R (Kg)

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Details

Tags

Parameters
Factory Lead Time 10 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 3
Supplier Device Package PG-SOT223-4
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2008
Series SIPMOS®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 1.8W Ta
Element Configuration Single
Power Dissipation 1.7W
Turn On Delay Time 4.6 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 25Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id 2.3V @ 94μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 154pF @ 25V
Current - Continuous Drain (Id) @ 25°C 170mA Ta
Gate Charge (Qg) (Max) @ Vgs 5.9nC @ 10V
Rise Time 4.4ns
Drain to Source Voltage (Vdss) 400V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 68 ns
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 170mA
Threshold Voltage 1.9V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 400V
Dual Supply Voltage 400V
Input Capacitance 154pF
Drain to Source Resistance 13.6Ohm
Rds On Max 25 Ω
Nominal Vgs 1.9 V
Height 1.6mm
Length 6.5mm
Width 6.7mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet