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BSP50H6327XTSA1

BSP50H6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSP50H6327XTSA1
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 266
  • Description: BSP50H6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Packaging Tape & Reel (TR)
Published 2007
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Max Power Dissipation 1.5W
Base Part Number BSP50
Number of Elements 1
Polarity NPN
Voltage 45V
Element Configuration Single
Current 1A
Power - Max 1.5W
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 1.3V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 500mA 10V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 1.8V @ 1mA, 1A
Collector Emitter Breakdown Voltage 45V
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 1A
Collector Emitter Saturation Voltage 1.8V
Max Breakdown Voltage 45V
Frequency - Transition 200MHz
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
hFE Min 1000
Height 1.6mm
Length 6.5mm
Width 3.5mm
RoHS Status ROHS3 Compliant
Factory Lead Time 26 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Supplier Device Package PG-SOT223-4
Operating Temperature 150°C TJ
See Relate Datesheet