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  • BSP603S2LHUMA1

BSP603S2LHUMA1

Trans MOSFET N-CH 55V 5.2A Automotive 4-Pin(3+Tab) SOT-223


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSP603S2LHUMA1
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 759
  • Description: Trans MOSFET N-CH 55V 5.2A Automotive 4-Pin(3+Tab) SOT-223 (Kg)

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Details

Tags

Parameters
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series OptiMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Voltage - Rated DC 55V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 5.2A
Pin Count 4
Number of Elements 1
Power Dissipation-Max 1.8W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.8W
Case Connection DRAIN
Turn On Delay Time 10.8 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 33m Ω @ 2.6A, 10V
Vgs(th) (Max) @ Id 2V @ 50μA
Halogen Free Not Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1390pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.2A Ta
Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V
Rise Time 16ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 28 ns
Continuous Drain Current (ID) 5.2A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 55V
Drain to Source Breakdown Voltage 55V
Height 1.6mm
Length 6.5mm
Width 3.5mm
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
See Relate Datesheet