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BSP60H6327XTSA1

BSP60H6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSP60H6327XTSA1
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 445
  • Description: BSP60H6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 6 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Max Power Dissipation 1.5W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BSP60
Number of Elements 1
Polarity PNP
Element Configuration Single
Case Connection COLLECTOR
Power - Max 1.5W
Transistor Application SWITCHING
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 500mA 10V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 1.8V @ 1mA, 1A
Collector Emitter Breakdown Voltage 45V
Transition Frequency 200MHz
Collector Emitter Saturation Voltage 1.8V
Frequency - Transition 200MHz
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
hFE Min 1000
Turn Off Time-Max (toff) 1500ns
Height 1.6mm
Length 6.5mm
Width 3.5mm
RoHS Status ROHS3 Compliant
See Relate Datesheet