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  • BSP613PH6327XTSA1

BSP613PH6327XTSA1

BSP613PH6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSP613PH6327XTSA1
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 308
  • Description: BSP613PH6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Power Dissipation 1.8W
Turn On Delay Time 6.7 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 130mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 875pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.9A Ta
Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
Rise Time 9ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 2.9A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage -60V
Drain to Source Breakdown Voltage -60V
Input Capacitance 875pF
Drain to Source Resistance 110mOhm
Rds On Max 130 mΩ
Height 1.5mm
Length 40mm
Width 40mm
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Factory Lead Time 10 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Supplier Device Package PG-SOT223-4
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2003
Series SIPMOS®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC -60V
Technology MOSFET (Metal Oxide)
Current Rating -2.9A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.8W Ta
Element Configuration Single
See Relate Datesheet