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  • BSS123NH6433XTMA1

BSS123NH6433XTMA1

BSS123NH6433XTMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSS123NH6433XTMA1
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 535
  • Description: BSS123NH6433XTMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2012
Series OptiMOS™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Reference Standard AEC-Q101
Number of Elements 1
Power Dissipation-Max 500mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 2.3 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6 Ω @ 190mA, 10V
Vgs(th) (Max) @ Id 1.8V @ 13μA
Input Capacitance (Ciss) (Max) @ Vds 20.9pF @ 25V
Current - Continuous Drain (Id) @ 25°C 190mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.9nC @ 10V
Rise Time 3.2ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 22 ns
Turn-Off Delay Time 7.4 ns
Continuous Drain Current (ID) 190mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.19A
Drain-source On Resistance-Max 6Ohm
DS Breakdown Voltage-Min 100V
Height 1mm
Length 2.9mm
Width 1.3mm
RoHS Status ROHS3 Compliant
See Relate Datesheet