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  • BSS126H6327XTSA2

BSS126H6327XTSA2

BSS126H6327XTSA2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-BSS126H6327XTSA2
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 576
  • Description: BSS126H6327XTSA2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Rds On Max 700 mΩ
Height 1mm
Length 2.9mm
Width 1.3mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 10 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Supplier Device Package SOT-23-3
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2003
Series SIPMOS®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 700Ohm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 500mW Ta
Element Configuration Single
Power Dissipation 500mW
Turn On Delay Time 6.1 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 500Ohm @ 16mA, 10V
Vgs(th) (Max) @ Id 1.6V @ 8μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 28pF @ 25V
Current - Continuous Drain (Id) @ 25°C 21mA Ta
Gate Charge (Qg) (Max) @ Vgs 2.1nC @ 5V
Rise Time 9.7ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 0V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 17mA
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 600V
Input Capacitance 21pF
FET Feature Depletion Mode
Drain to Source Resistance 700Ohm
See Relate Datesheet