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  • BSS127SSN-7

BSS127SSN-7

MOSFET N-CH 600V 50MA SC59


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-BSS127SSN-7
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 562
  • Description: MOSFET N-CH 600V 50MA SC59 (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 18 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 610mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.25W
Turn On Delay Time 5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 160 Ω @ 16mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 21.8pF @ 25V
Current - Continuous Drain (Id) @ 25°C 50mA Ta
Gate Charge (Qg) (Max) @ Vgs 1.08nC @ 10V
Rise Time 7.2ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 168 ns
Turn-Off Delay Time 28.7 ns
Continuous Drain Current (ID) 50mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.045A
Drain to Source Breakdown Voltage 600V
Height 1.3mm
Length 3.1mm
Width 1.7mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet